Friday, July 11, 2008

High Reliability Tantalum


With the commercial power supply market increasingly aware of the need to minimize failure rates, as more of these products are being designed into high-end systems, demand has risen for different levels of enhanced-reliability, low ESR capacitors. In response, AVX has introduced a range of products within its TRJ professional series tantalum chip which can deliver significantly lower ESR while achieving reliability levels (0.5%/1000hours) twice that of standard tantalum devices. The capacitors are available in EIA standard A, B, C, D and E case sizes in voltages ranging from 6.3 to 50V and capacitance values from 0.1 to 470µF
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Maxim quad and dual sink-source current DACs for power-supply adjustment

Maxim has introduced quad and dual sink-source current DACs specifically designed for power-supply adjustment, the DS4422 and DS4424.

Both are I2C-controlled with 7bit current DACs designed to control a DC-DC converter by sinking or sourcing current directly into the power supply's feedback node. "This control technique allows existing power-supply designs to be margined and adjusted with minimal redesign, making the devices ideal for servers and video processing cards," claimed the firm.

The chips power-up with their outputs open circuit to allow the power-supply feedback resistors to perform naturally. This removes the need to address the chip immediately at start-up.

DAC full scale output current is programmed between 50 and 200µA with an external resistor with ±six per cent accuracy.

The I2C bus can then be used to linearly set the output currents to any of the 127 sink or 127 source steps up to the maximum value.

Two address inputs allow up to four devices or sixteen separate supplies to be controlled on a single I2C bus.

The DS4422 (two DAC) and DS4424 (four DAC) are specified over -40 to +85°C and come in a 3x3mm 14pin TDFN package.

See http://www.maxim-ic.com

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Supertex Class-D driver for high power audio amplifiers

Californian high voltage chip firm Supertex has introduced a Class-D driver for high power audio amplifiers.

"The MD7120 has been optimised for parameters critical to Class-D audio performance such as high efficiency and low EMI," said marketing v-p Ahmed Masood.

"Additionally, this Mosfet driver provides up to a 3.A peak driving current with matched output resistance and channel-to-channel propagation delay for lower total harmonic distortion and noise."

Powered from between 200V and 12V, amplifiers can be built with over 100W output with 90 per cent efficiency.

Dead time matching is ±5ns with rise or fall times under 30ns into a typical 1nF load. Four N-channel output mosfets are required, driven from normal logic level inputs by directly coupled internal level translators.

On-chip is control logic, level translators, a bootstrap-powered high side gate driver and over-temperature, under-voltage and current protection circuits.

"The thresholds of the current protection for both the high and low sides are resistor-programmable," said Supertex.

An associated application note AN-H61 (PDF) describes demo board with a self-oscillating 750kHz second-order modulator using the driver. The board delivers 50W into 8Ω with 0.01 per cent THD+noise from ±35V. Claimed efficiency of the power stage is over 80 per cent at 10 to 20W.

See http://www.supertex.com

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Nanoscale Lithographic Technology: Finer Lines For Microchip


MIT graduate student Chih-Hao Chang of the Department of Mechanical Engineering demonstrates the absence of light diffraction from a frequency-doubled grating on a 100 mm-diameter silicon wafer. The wafer is immersed in water to enable blue-light optical diffraction from the 200 nm-period 'master' grating at the periphery of the wafer, whilst the center of the wafer, where the grating has a 100 nm pitch, exhibits no optical diffraction. Mr. Chang is standing in front of the MIT nanoruler tool which produced the patterns. (Credit: Image courtesy of Massachusetts Institute of Technology)

Their new technique could pave the way for next-generation computer memory and integrated-circuit chips, as well as advanced solar cells and other devices.

The team has created lines about 25 nanometers (billionths of a meter) wide separated by 25 nm spaces. For comparison, the most advanced commercially available computer chips today have a minimum feature size of 65 nm. Intel recently announced that it will start manufacturing at the 32 nm minimum line-width scale in 2009, and the industry roadmap calls for 25 nm features in the 2013-2015 time frame.

The MIT technique could also be economically attractive because it works without the chemically amplified resists, immersion lithography techniques and expensive lithography tools that are widely considered essential to work at this scale with optical lithography. Periodic patterns at the nanoscale, while having many important scientific and commercial applications, are notoriously difficult to produce with low cost and high yield. The new method could make possible the commercialization of many new nanotechnology inventions that have languished in laboratories due to the lack of a viable manufacturing method.

The MIT team includes Mark Schattenburg and Ralf Heilmann of the MIT Kavli Institute of Astrophysics and Space Research and graduate students Chih-Hao Chang and Yong Zhao of the Department of Mechanical Engineering. Their results have been accepted for publication in the journal Optics Letters and were recently presented at the 52nd International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication in Portland, Ore.

Schattenburg and colleagues used a technique known as interference lithography (IL) to generate the patterns, but they did so using a tool called the nanoruler--built by MIT graduate students--that is designed to perform a particularly high precision variant of IL called scanning-beam interference lithography, or SBIL. This recently developed technique uses 100 MHz sound waves, controlled by custom high-speed electronics, to diffract and frequency-shift the laser light, resulting in rapid patterning of large areas with unprecedented control over feature geometry.

While IL has been around for a long time, the SBIL technique has enabled, for the first time, the precise and repeatable pattern registration and overlay over large areas, thanks to a new high-precision phase detection algorithm developed by Zhao and a novel image reversal process developed by Chang.

According to Schattenburg, "What we're finding is that control of the lithographic imaging process is no longer the limiting step. Material issues such as line sidewall roughness are now a major barrier to still-finer length scales. However, there are several new technologies on the horizon that have the potential for alleviating these problems. These results demonstrate that there's still a lot of room left for scale shrinkage in optical lithography. We don't see any insurmountable roadblocks just yet."

The MIT team performed the research in the Space Nanotechnology Laboratory of the MIT Kavli Institute of Astrophysics and Space Research, with financial support from NASA and NSF.

Adapted from materials provided by Massachusetts Institute of Technology.

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Wednesday, July 09, 2008

Silicon Storage 8051-based MCU with two system management buses

Silicon Storage Technology has added to its FlashFlex family of 8-bit microcontrollers with its first 8051-based MCU to feature two system management buses (SMBus), each supporting up to 400kbit/s data throughput, in a 6x6mm QFN package.

The SST89C58RC supports operating voltages from 2.7V to 5.5V.

According to the supplier, the dual hardware SMBus interfaces let the SST89C58RC act as an intermediary between a host processor and a complex multi-chip A/V subsystem.

The MCU is suitable for bundled applications, shielding the host from low-level interrupts while providing it with a 'virtual' register interface for simplified control and status access.

The SST89C58RC comes with 1kbyte of on-chip RAM and up to 34kbyte of embedded SuperFlash memory.

See http://www.sst.com

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Fairchild Semiconductor FOD07xx Series high speed logic gate Optocoupler

Fairchild Semiconductor brings designers optocoupler devices that deliver a fast and robust isolation interface to ensure low transmission error rates and proven reliability for noisy industrial environments.

The FOD0721, FOD0720 and FOD0710 are logic gate optocouplers that isolate the logic control circuitry from the transceiver at the bus interface level. Since industrial systems are susceptible to noise transients, FOD07xx's high noise immunity coupled with its high speed (25Mbps) minimises the chance of transmission errors or system failures. These products meet high reliability requirements and are qualified according to the UL1577 standard. The FOD07xx series is ideal for industrial communication standards such as Profibus, DeviceNet, CAN and RS485.

The FOD07xx series are packaged in Fairchild's patented Optoplanar co-planar packaging, which claims to reduce package capacitance by more than 30 per cent compared to other products. This low capacitance package leads to a guaranteed 20kV/µs minimum Common Mode Noise Rejection rating that is double that of alternative products, allowing the FOD07xx series to operate in noisy industrial environments. 

The FOD07xx series is part of Fairchild's optoelectronic portfolio that includes high-speed optocouplers, gate drive optocouplers, snubberless triac driver, photo transistors, and infrared components. The FOD0721, FOD0720 and FOD0710 use lead-free (Pb-free) terminals and have been characterised for moisture sensitivity in accordance with the Pb-free reflow requirements of the joint IPC/JEDEC standard J-STD-020.

All Fairchild's products are designed to meet the requirements of the EU's directive on the restriction of the use of certain substances (RoHS).

Price (each 1000pcs):

  • $2.67 for FOD0721
  • $2.44 for FOD0720
  • $2.21 for FOD0710

Availability:

Samples are available now with delivery 6 weeks ARO

More information: http://www.fairchildsemi.com.

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Renesas Technology high-frequency power MOSFETS

Renesas Technology's latest high-frequency power Mosfets, designed for use in the transmitter power amplifier of handheld wireless equipment, the devices achieve 60% added power efficiency in the RQA0010 at 3.6V and 55% in the RQA0014.

In particular, when a two-stage amplifier is implemented by driving the RQA0010 with the output of the RQA0014, the circuit achieves the industry's highest level of performance: a 1.2W output at 3.6V.

With high ESD immunity, the devices maintain their high-efficiency characteristics at 20kV and over and achieve ESD immunity level 4. 

The ESD immunity level is measured with a test that verifies that a static aerial discharge applied to the antenna of a wireless device does not affect that device and that simulates the discharges that actually could occur from a person or metal object as required by the IEC61000-4-2 standard.

The following levels are stipulated by this standard. Level 1: 2kV, level 2: 4kV, level 3: 8kV, level 4: 15kV.

The RQA0014 is mainly for use as a transmitter power amplifier driver and the RQA0010 is suitable for use as a power amplifier.

See http://www.renesas.eu

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